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au.\*:("PICRAUX ST")

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ION CHANNELING STUDIES OF THE CRYSTALLINE PERFECTION OF EPITAXIAL LAYERSPICRAUX ST.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 587-593; BIBL. 21 REF.Serial Issue

CORRELATION OF ION CHANNELING AND ELECTRON MICROSCOPY RESULTS IN THE EVALUATION OF HETEROEPITAXIAL SILICONPICRAUX ST; THOMAS GJ.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 594-602; BIBL. 16 REF.Serial Issue

ROLE OF INTEGRATED LATERAL STRESS IN SURFACE DEFORMATION OF HE-IMPLANTED SURFACESEERNISSE EP; PICRAUX ST.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 9-17; BIBL. 38 REF.Article

DEUTERIUM LATTICE LOCATION IN CR AND W.PICRAUX ST; VOOK FL.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 20; PP. 1216-1220; BIBL. 8 REF.Article

A LINE-SOURCE ELECTRON BEAM ANNEALING SYSTEMKNAPP JA; PICRAUX ST.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1492-1498; BIBL. 14 REF.Article

MICROSECOND TIME-SCALE SI REGROWTH USING A LINE-SOURCE ELECTRON BEAMKNAPP JA; PICRAUX ST.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 873-875; BIBL. 7 REF.Article

CORRELATION OF ION CHANNELING AND ELECTRON MICROSCOPY RESULTS IN THE EVALUATION OF HETEROEPITAXIAL SILICONPICRAUX ST; THOMAS GJ.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 594-602; BIBL. 16 REF.Serial Issue

DECHANNELING BY CURVED PLANES: DISLOCATIONS AND BENT CRYSTALSELLISON JA; PICRAUX ST.1981; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1981; VOL. 83; NO 6; PP. 271-274; BIBL. 9 REF.Article

PLANAR-CHANNELING SPATIAL DENSITY UNDER STATISTICAL EQUILIBRIUMELLISON JA; PICRAUX ST.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 3; PP. 1028-1038; BIBL. 18 REF.Article

ION-CHANNELING AND OPTICAL ABSORPTION STUDIES OF IMPLANTATION DISORDER IN GERMANIUM.PICRAUX ST; STEIN HJ.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3784-3788; BIBL. 16 REF.Article

STRUCTURE OF HYDROGEN CENTER IN D-IMPLANTED SIPICRAUX ST; VOOK FL.1978; PHYS. REV. B; USA; DA. 1978; VOL. 18; NO 5; PP. 2066-2077; BIBL. 28 REF.Article

ENHANCED DIFFUSION OF ZN IN AL UNDER HIGH-FLUX HEAVY-ION IRRADIATIONMYERS SM; PICRAUX ST.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4774-4776; BIBL. 15 REF.Article

CHARACTERIZATION OF SILICON METALLIZATION SYSTEMS USING ENERGETIC ION BACKSCATTERING.BORDERS JA; PICRAUX ST.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 9; PP. 1224-1231; BIBL. 31 REF.Article

CARBON-INDUCED AMORPHOUS SURFACE LAYERS IN TI-IMPLANTED FE = COUCHES SUPERFICIELLES AMORPHES INDUITES PAR C DANS FE IMPLANTE PAR TIFOLLSTAEDT DM; KNAPP JA; PICRAUX ST et al.1980; APP. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 3; PP. 330-333; BIBL. 8 REF.Article

DEEP DEUTERIUM TRAPS IN Y-IMPLANTED FE = PIEGES PROFONDS POUR LE DEUTERIUM DANS FE IMPLANTE A L'YTTRIUMMYERS SM; PICRAUX ST; STOLTZ RE et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 168-170; BIBL. 11 REF.Article

DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN FE = PIEGEAGE AUX DEFAUTS DU DEUTERIUM IMPLANTE DANS FEMYERS SM; PICRAUX ST; STOLTZ RE et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5710-5719; BIBL. 24 REF.Article

STUDY OF CU DIFFUSION IN BE USING ION BACKSCATTERINGMYERS SM; PICRAUX ST; PREVENDER TS et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 9; NO 10; PP. 3953-3964; BIBL. 36 REF.Article

PROFILE STUDIES OF HYDROGEN TRAPPING IN METALS DUE TO ION DAMAGEPICRAUX ST; BOTTIGER J; RUD N et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 4; PP. 179-181; BIBL. 9 REF.Article

LOW-TEMPERATURE ION BEAM MIXING OF AL-SB = MELANGE PAR FAISCEAU D'IONS, A BASSE TEMPERATURE, DE AL-SBDELAFOND J; PICRAUX ST; KNAPP JA et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 237-240; BIBL. 10 REF.Article

ELECTRON BEAM ANNEALING OF ION IMPLANTED AL = RECUIT PAR FAISCEAU D'ELECTRONS DE AL IMPLANTE PAR DES IONSWAMPLER WR; FOLLSTAEDT DM; PICRAUX ST et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 5; PP. 366-368; BIBL. 12 REF.Article

EXPERIMENTAL STUDY OF PRECIPITATION IN AN ION-IMPLANTED METAL: SB IN APKANT RA; MYERS SM; PICRAUX ST et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 214-222; BIBL. 12 REF.Article

MICROALLOY LAYER FORMATION BY ION IMPLANTATION = FORMATION DE COUCHES MICROALLIEES PAR IMPLANTATION D'IONSPICRAUX ST; MYERS SM; FOLLSTAEDT DM et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 63; NO 1; PP. 1-2; BIBL. 8 REF.Conference Paper

DEUTERIUM TRAPPING IN IRON ALLOYS FORMED BY ION IMPLANTATION = PIEGEAGE DU DEUTERIUM DANS LES ALLIAGES DE FER FORMES PAR IMPLANTATION IONIQUEMYERS SM; PICRAUX ST; STOLTZ RE et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 63; NO 1; PP. 37-38Conference Paper

HYDROGEN DISTRIBUTION PROFILINGLANGLEY RA; PICRAUX ST; VOOK FL et al.1975; IN: HYDROGEN ENERGY. HYDROGEN ECON. ENERGY CONF.; MIAMI BEACH, FLA.; 1974; NEW YORK; PLENUM PRESS; DA. 1975; PP. 1089-1103; BIBL. 8 REF.Conference Paper

SLIP DEFORMATION AND MELT THRESHOLD IN LASER-PULSE-IRRADIATED AL = DEFORMATION PAR GLISSEMENT ET SEUIL DE FUSION DANS AL IRRADIE PAR IMPULSION LASERFOLLSTAEDT DM; PICRAUX ST; PEERCY PS et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 4; PP. 327-329; BIBL. 9 REF.Article

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